摘要
用反应溅射法制备了 Fe- N薄膜和不同 Ta含量的 Fe- Ta- N薄膜。研究了这些薄膜的结构和磁性与 Ta含量的关系。实验发现 ,Ta的加入有利于抑制薄膜中γ- Fe4 N相的生成。加入的 Ta部分取代了 α- Fe晶格中的 Fe原子形成了 α- Fe(Ta)固溶体 ,部分则沉积在 α- Fe晶粒边界与 N生成 Ta N化合物 ,抑制了 α- Fe晶粒在热处理过程中的长大 。
The Fe N and Fe Ta N films with different Ta concentration were prepared by reactive sputtering. Their structure and magnetic properties were investigated. It is found that the addition of Ta is beneficial to inhibit the formation of γ Fe 4N phase in the films.A part of Ta atoms replace Fe atoms in α Fe lattice and the other Ta atoms precipitate in α Fe grain boundaries and produce TaN compounds. The thermal stability of the films is improved because the TaN compounds suppress the growth of α Fe grains during annealing.
出处
《磁性材料及器件》
CAS
CSCD
2001年第6期4-8,共5页
Journal of Magnetic Materials and Devices