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含随机分布缺陷的多晶铁电材料的有效电弹性能 被引量:1

THE EFFECTIVE ELECTROELASTIC PROPERTIES OF POLYCRYSTALLINE FERROELECTRIC CERAMICS WITH RANDOMLY ORIENTED DEFECTS
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摘要 针对铁电材料含有随机分布缺陷以及微结构在外场作用下发生变化的特点,建立起一个细观统计力学模型,考虑到缺陷和畴极化转动之间的相互影响,利用细观力学方法──Eshelby等效夹杂法和Mori-Tanaka的平均场理论,具体分析了所含缺陷以及外场对铁电材料有效电弹性能和模量的影响.针对BaTiO3铁电陶瓷的有效电弹性能与常数的预报结果表明了缺陷的存在将增强材料的压电性能. in terms of the microstructure characteristics of polycrystalline ferroelectric ceramics, a statistical micromechanics model is employed to predict the effective electroelastic properties of polycrystalline ferroelectric ceramics with randomly oriented defects, such as voids and mi-crocracks, by the method of Eshelby's equivalent inclusion theory and Mori-Tanaka's mean field concept. The model incorporates the effects of crystallographic domain switching under external mechanical or electric field and the randomly oriented defects on the macroscopic behaviors of the polycrystalline ferroelectric ceramics. The analytical predictions of BaTiO_3 polycrystalline ceramics are shown that the defects can enhance the effective piezoelectric properties but reduce the elastic properties, which are consistent with the experimental results.
出处 《力学学报》 EI CSCD 北大核心 2001年第3期407-414,共8页 Chinese Journal of Theoretical and Applied Mechanics
基金 国家杰出青年科学基金资助项目.
关键词 多晶铁电材料 随机分布缺陷 极化转动 细观力学 有效电磁性能 微结构 外场作用 ferroelectrics, randomly oriented defects, domain switching, micromechanics, elec-troelastic properties
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参考文献7

  • 1Chen Xi,Acta Mater,1997年,45卷,8期,3181页
  • 2Zhang Q M,J Mater Res,1997年,12卷,1期,226页
  • 3Chen Xi,Smart Mater Sturct,1997年,6卷,145页
  • 4Hwang S C,Acta Metall Mater,1995年,43卷,5期,2073页
  • 5Cao Hengchu,J Am Ceram Soc,1993年,76卷,4期,890页
  • 6Wang Biao,Int J Solid Struct,1992年,29卷,3期,293页
  • 7Chueng H T,Ferroelectrics,1987年,76卷,327页

同被引文献12

  • 1丑修建,翟继卫,姚熹.钛酸钡基铁电材料的介电非线性研究[J].硅酸盐学报,2007,35(S1):22-29. 被引量:4
  • 2张丽屏,余寿文.循环电载下热效应对铁电材料畴变的影响[J].固体力学学报,2006,27(4):335-340. 被引量:3
  • 3R. Mueller a, D. Gross a, D. C. Lupaseu. Driving forces on domain walls in ferroelectric materials and interaction with defects[J].Computational Materials Science, 2006, (35) : 42-52.
  • 4D. Schrade , R. Mueller a, D. Gross a. Interaction of domain walls with defects in ferroelectric materials [J]. Mechanics of Materials, 2007, (39):161-174.
  • 5W. F. Li, G. J. Weng. A theory of ferroelectric hysteresis with a superimposed stress [J]. Journal of Applied Physics, 2002, 91(6):3806-3815.
  • 6W. F. Li, G. J. Weng. A micromechanics-based thermodynamic model for the domain switch in ferroelectric crystals [J]. Acta Materialia, 2004, (52) :2489-2496.
  • 7N. Srivastava, G.J. Weng. A dual-phase homogenization theory for the hysteresis and butterfly-shaped behavior of ferroelectric single crystals[J]. Mechanics of Materials, 2006, (38):945-957.
  • 8J. Li. Orientation-dependent piezoelectric Eshelby S-tensor for a lamellar structure in a transversely isotropic medium [J]. Acta Mechanica , 2003, (162):69-81.
  • 9Franco Jona, G. Shirane. Ferroelectric Crystals[M]. Dover Publications, Inc. New York, 1993, 108-225.
  • 10Miller, R.C., Weinreich, G. 1960. Mechanism for the Sidewise Motion of 180° Domain Walls in Barium Titanate [J]. Physical Review, 1960,117 (6) : 1460- 1466.

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