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SiC冶炼炉温度场有限元分析 被引量:2

Finite Element Analysis for the Temperature Field of Silicon Carbide Smelting Furnace
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摘要 采用有限元分析方法对Acheason炉内温度场进行研究,进而采用ANSYS数值模拟软件对冶炼炉内温度分布进行模拟,得到了冶炼炉内温度分布的模拟图,分析了炉内的温度分布规律及其对SiC的生成和产率的影响,并提出了扩大SiC生成温度区域的措施。 Temperature field of Acheason furnace was studied by using finite element analysis and ANSYS numeri- cal simulation software was used to slrnulate temperature distribution of SiC smelting furnace. The simulated diagram of temperature distuibution was achieved. The rules of temperature distribution were studied in the smelting furnace and the specific methods to enlarge the temperature field of silicon carbide synthesis were supplied.
出处 《陶瓷工程》 2001年第5期6-10,共5页 Ceramics Engineering
关键词 温度场 有限元 ANSYS 碳化硅 冶炼炉 SiC Temperature Field Finite Element ANSYS
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