摘要
常温下 ,采用射频磁控溅射法在有机的柔性衬底上制备出了SnO2 :Sb透明导电膜 ,并对薄膜的结构和光电性质进行了研究 .制备的样品为多晶薄膜 ,并且保持了二氧化锡的金红石结构 .性能良好的薄膜电阻率为 6 .5× 10 - 3Ω·cm ,载流子浓度为 1.2× 10 2 0 cm- 3 ,霍耳迁移率是 9.7cm2 ·V- 1 ·s- 1 .薄膜在可见光区的平均透过率达到了 85 %.
Transparent conducting SnO 2: Sb films were deposited on organic substrates by r. f. magnetron-sputtering at room temperature. Structural and photoelectric properties of the deposited films are investigated. Polycrystalline films still had the rutile structure. The films with a resistivity ～6.5×10 -3Ω·cm, carrier concentration ～1.23×10 20cm -3 and Hall mobility ～ 9.7cm 2·V -1·s -1 have been obtained. Their average transmittance reaches 85% in the visible region.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第2期351-354,共4页
Acta Physica Sinica
基金
高等学校骨干教师资助计划资助的课题~~
