一维介观结链中电荷孤子的控制

Controlling of charge solitons in a one-dimensional tunnel junction array

研究了一维介观结链中的电势分布随各岛上门电压和电子数分布的变化关系 ,并发现在一个岛上加一个门电压会产生一个静电势孤子 .通过调节门电压可以较好地控制静电势孤子的形状及其位置 ,从而达到对电荷孤子的有效控制 .

The dependence of potential distribution on gate voltages and the electron number distribution in a one-dimensional tunnel junction array is investigated. We find that biasing a gate will excite a static potential soliton similar to a charge soliton. By changing the gate voltage, one can adjust the profile and position of the static potential soliton and then have an effective control of charge solitons.