ECR-CVD法制备的a-C:F:H薄膜在N_2气氛中的热退火研究

Investigation of thermal annealing for a-C:F:H filmsdeposited with microwave ECR-CVD method

改变CHF3 CH4源气体流量比 ,使用微波电子回旋共振化学气相沉积方法 (ECR CVD)制备了具有不同C—F键结构的a C :F :H薄膜 ,着重研究了退火对其结构的影响 .结果显示薄膜的厚度及其光学带隙E0 4随退火温度的上升均呈现了不同程度的下降 .借助于红外吸收光谱和所提出的热解模型解释了产生这种关系的结构上的根源 .

A group of a-C:F:H films with different C—F bond configurations are prepared with microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) by changing source gas flow ratio of CHF 3/CH 4. We focus on the influence of annealing temperature on the structure of the film. The results have shown that the film′s thickness and its optical band gap E 04 present a decrease of different degree with the increasing annealing temperature. With the help of the as-supposed pyrogenation model and the infrared spectra, we have explained the structural source which gives rise to this relationship.