摘要
描述了在单粒子翻转数值模拟中的一种有效方法—MonteCarlo方法 ,并对该方法中的粒子输运过程和相关的随机抽样进行了描述 .对 14MeV的中子从存储器硅片表面随机入射引起的单粒子翻转进行了计算和分析 。
The Monte Carlo method is used in the single event simulation which describes the processes of the particle transportation and the random sampling. Particularly, the single event upset of a silicon chip induced by 14*!MeV neutrons at a random incident angle is calculated and analyzed. In the mean time, the Monte Carlo error is also considered. By the Monte Carlo method, some information about the physical mechanism of the single event upset is provided.
出处
《计算物理》
CSCD
北大核心
2002年第2期168-172,共5页
Chinese Journal of Computational Physics