摘要
基于半导体量子阱激光器的基本理论 ,设计了合理的 1 .3 μm无致冷 Al Ga In As/ In P应变补偿量子阱激光器结构 ,通过低压金属有机化学气相外延 ( LP-MOVPE)工艺在国内首次生长出了高质量的 Al Ga In As/ In P应变补偿量子阱结构材料 ,用此材料制作的器件指标为激射波长 :1 2 80 nm≤λ≤ 1 3 2 0 nm,阈值电流 :Ith( 2 5℃ )≤ 1 5m A,Ith( 85℃ )≤ 3 0 m A,量子效率变化 :Δηex( 2 5℃～ 85℃ )≤ 1 .0 d B,线性功率 :P0 ≥ 1 0 m
m uncooled AlGaInAs/InP strain-compensated quantum well lasers have been designed based on semiconductor quantum well lasers theory.High quality AlGaInAs/InP strain-compensated quantum well structure has been grown by LP-MOVPE for the first time at home and devices have been fabricated with the materials.Test result shows that the parameters of the lasers are:1280nm≤λ≤1320nm,I th(25℃)≤15mA,I th(85℃)≤30mA,Δη ex(25℃～85℃)≤1.0dB and P 0≥10mW.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第2期191-195,共5页
Acta Photonica Sinica
基金
国家高技术 86 3-30 7资助项目 (编号为 86 3-30 7-1 1 -1 ( 0 2 ) )
