热处理对不加热ITO/玻璃基底上沉积的PLZT铁电薄膜结构转变的影响

EFFECT OF HEAT TREATMENT ON STRUCTURE TRANSFORMATION OF FERROELECTRICS PLZT THIN FILMS DEPOSITED ON UNHEATED ITO/GLASS SUBSTRATES

采用射频磁控溅射技术在不加热ITO/玻璃衬底上制备了PLZT( 9/ 5 2 / 48)铁电薄膜 .X射线衍射分析表明溅射气氛中φ(O2 )∶φ(Ar)为 3∶7的膜在PbO保护下 ,6 2 5℃热处理 15 0min后完全形成钙钛矿相的PLZT ,不存在第 2相 ,介电常数ε为 12 2 4.XPS表面成分分析及深度分析表明 :PbO保护气氛中热处理不仅可以防止失铅 ,而且还可以弥补在制膜过程中失去的铅 .用改进的Sawyer -Tower电路测量了薄膜的电滞回线 ,并获得剩余极化强度为 17.7μC/cm2 、矫顽场为 2 4.

Ferroelectrics PLZT(9/52/48) thin films were deposited by RF magnetron sputtering on unheated ITO/glass substrates using an oxide sintered target with excess PbO. X_ray diffraction indicates that the PLZT thin films are completely structured by perovskite phase under the conditions of thermal annealing at 625 ℃ for 150 min in the sputtering gas of PbO with 30 percent oxygen in volume. The dielectric constant ( ε ) of the films is 1 224. XPS surface composition and depth analysis indicate that thermal annealing under the PbO protection not only avoid the Pb_loss phenomenon, but also compensates the lost lead in the processing of the deposition. Hysteresis loop was measured using a modified Sawyer-Tower circuit at room temperature. The remanent polarization and the coercive field are 17.7 μC/cm 2 and 24.3 kV/cm, respectively.