铌酸锂晶体最佳掺杂含量的理论计算

Theoretical Calculation of Optimum Doping Content for LiNbO_3 Crystals

本文把一个从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到铌酸锂晶体材料。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系 ,给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系 ,进而得到了一个掺杂最佳含量的表达式。系统地分析了铌酸锂晶体材料的掺杂改性的实验结果 ,应用掺杂最佳含量表达式定量计算了铌酸锂晶体材料的最佳掺杂含量 ,定量计算的结果与实验数据是比较接近的。该理论方法也适用于其他薄膜材料最佳掺杂含量的理论计算。

The quantitative theory of optimum doping content of electric film materials was introduced in this paper.In this theory,the relationship between one of the physical properties and crystal structure and preparation method and doping content were set up.The parabola equation that can be fixed to test curve and which has the reliable physical meaning was given.The extreme value of this equation is just determined to the quantitative relationship between optimum doping content and the crystal structure and the preparation method,and the expression of optimum doping content was obtained accordingly.The experimental results of doping modified for LiNbO 3 crystals were analyzed.Using this expression to calculate the optimum doping content of LiNbO 3 crystals,the quantitative calculation results are in accordance with the experimental results.This theory is also appropriate for the optimum doping content problems of other electronic film materials.