摘要
分析影响正弦相位调制半导体激光干涉仪测量精度和系统分辨力的因素,提出了用分布布拉格反射半导体激光器DBR LD实现高分辨力亚纳米精度测量的方案。理论计算表明,DBR LD的波长连续调制深度比F-P腔LD高一个量级。指出由于DBR LD的特殊结构可通过简单的反馈回路稳定输出光功率,有效地避免了光强波动对测量精度提高的限制。
The factors affecting measuring accuracy and system resolution of the sinusoidal phase modulation laser diode interferometer are analyzed and a scheme for achieving high-resolution subnanometer accuracy measurement by use of Distributed Bragg Reflection Laser Diode (DBR LD) is proposed . The theoretical calculation shows that the continuous modulation depth of DBR LD wavelength is higher than that of F-P cavity LD for an order of magnitude. The limitation for improving measuring accuracy by light intensity fluctuation is effectively avoided because the output light power can be stabilized by a simple feedback loop of the special structure in the distributed Bragg reflection laser diode.
出处
《光电工程》
CAS
CSCD
北大核心
2001年第6期69-72,共4页
Opto-Electronic Engineering