摘要
The Monte Carlo simulators with the three valley model and the full band Monte Carlo model are used to explore electron transport in bulk wurtzite gallium nitride (GaN).Comparison of the results based on the two models is made.The results based on both models are basically the same at the lower field region,but exhibit some differences at the higher field region.The electron average energy exhibits obvious difference at the high field region between the two models.This difference further causes several other differences of GaN properties,such as the drift velocity versus field characteristics,the repopulation.Because of the complicated energy band structures at the high energy region for wurtzite GaN,the analytical band structures in the three valley model can not cover all properties of the band structures of wurtzite GaN,so the results based on the full band Monte Carlo model should be more exact.
报道了分别用三带和全带模型蒙特卡罗方法模拟纤锌矿相 Ga N体材料输运特性的结果 ,并对基于两种模型的模拟结果进行了比较 .在低场区 ,基于两种模型获得的输运特性基本相同 ,但在高场区却表现出明显的差别 .这是因为在高场区 ,电子平均能量较高 ,多数电子处于能带图中的高能态位置 ,电子能量与波矢量的关系表现出明显的非椭圆特性 .由于三带模型假定了能量与波矢量简单关系 ,故算得的平均能量 ,高于由全带蒙特卡罗模拟算得的能量 .从而导致其它特性的差别 .全带模型包含了基于能带理论算得的能带结构的所有特性 。
