摘要
描述了采用离子注入、低温慢降温热处理和背面磷吸杂等方法在高阻 (111) N型硅片上研制高性能 PIN光电二极管的工艺技术 ,测量并分析了光电二极管的 I- V、C- V和光灵敏度等性能 .有源区面积为 16 mm× 17mm的二极管样品在全耗尽偏置电压下 (Vd=70 V) ,环境温度为 2 5℃时的暗电流和端电容典型值分别达到≤ 5 n A和≤ 12 0 p F.探测器在波长区域 (380～ 5 0 0 nm )的光谱响应典型值 :4 0 0 nm为 0 .2 6 A/ W,5 0 0 nm为 0 .33A / W.量子效率在 4 0 0～90 0 nm光谱范围内达到 70 %～ 80 % .对于紫外光至蓝光区域 。
Ion implantation,annealing at low temperature and processing of slowly droping of the temperature,and gettering process of P on the backside are used to fabricate a new type of PIN photodiodes on silicon wafer of 300μm thickness with high resistivity.The current voltage,capacitance voltage and photo sensitivity characteristics of the diode are studied.Dark current and terminal capacitance of the diode with active area of 16×17mm 2 under fully depleted voltage are respectively lower than 5nA and 120pF at temperature of 25℃.The typical values of photo sensitivity within the range of the wavelength from 380 to 500nm are 0 26A/W at 400nm and 0 33A/W at 500nm.Quantum efficincy can reach 70%～80% for UV and blue spectral regions.The photodiode is an excellent electrical and spectral element for UV and blue spectral regions.
