摘要
This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage and the different depletion layer extension on the diffused side and substrate side are demonstrated in the report.The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the complex P N junction.The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.
基于等价掺杂转换理论的应用 ,得到了解析计算非对称线性缓变 P- N结击穿特性 .由于非对称线性缓变 P-N结是单扩散 P- N结的一个恰当近似 ,因而 ,研究其击穿特性可以更好地理解和设计功率器件 P- N结的终端结构 .运用等价掺杂转换方法的基本理论得到了不同扩散掺杂梯度和衬底浓度组合系列的击穿电压 .研究了最大耗尽层宽度在扩散侧和衬底侧的扩展 ,给出了它们随扩散掺杂梯度和衬底浓度组合的变化而出现的不同特点 .本方法预言的最大击穿电压较之单纯的突变结和对称线性缓变 P- N结更接近文献报道的结果 ,显示了等价掺杂转换理论的理论计算非对称线性缓变 P-
