与CMOS工艺兼容的硅高速光电探测器模拟与设计

Simulation and Design of a CMOS-Process-Compatible High-Speed Si-Photodetector

用器件模拟的方法 ,设计了一种与常规 CMOS工艺兼容的硅高速光电探测器 ,该探测器可与 CMOS接收机电路单片集成 ,对该探测器进行了器件模拟研究 ,给出了该探测器的电路模型 .通过 MOSIS(MOS im plem entationsupport project) 0 .35μm COMS工艺制做了该探测器 ,实际测试了该器件的频率响应和波长响应 ,探测器频率响应在 1GHz以上 ,峰值波长响应在 0 .6 9μm.

The high speed photodetector which is compatible with CMOS process is designed by using the method of device simulation.The detector can be monolithically integrated with CMOS receiver.The device simulation is processed by commercial software and the circuit model is given.The detector is fabricated by using 0 35μm CMOS at MOSIS(MOS implementation support project).Both the frequency response and wavelength response of the detector are tested.The frequency response is above 1GHz and the peak wavelength response is at 0 69μm.