摘要
采用二维 TMA Medici模拟软件对 SOI结构的串扰特性进行了分析 .模拟发现随着频率的增加 ,SOI的埋氧化物对串扰噪声几乎不起隔离作用 ,同时 ,连接 SOI结构的背衬底可以在很大程度上减小串扰的影响 .还对减少串扰的沟槽隔离工艺、保护环及差分结构的有效性进行了比较分析 ,对一些外部寄生参数对串扰的影响也进行了研究 .并给出了 SOI结构厚膜和薄膜结构体掺杂浓度对噪声耦合的影响 ,所得到的结果对设计低噪声耦合的
with two dimensional (2D) TMA medici simulator,the systematic analysis of cross talk behavior is presented for SOI analog digital mixed integrated circuits.It is found that the buried oxide nearly becomes transparent with the increase of frequency and the noise coupling can be decreased to a large extent by contacting the substrate to the ground.At the same time,the efficiency of different strategies for reducing cross talk such as trench isolation,capacitive guard ring and differential structure is studied.Besides,the effect of some extrinsic parameters on the cross talk behavior is also given.The results can serve as a guideline for designing low noise coupling SOI analog digital mixed IC's.
基金
国家自然科学基金资助项目 (No.69910 161992 )~~
