摘要
采用纳米级二氧化硅代替国际上惯用的三氧化二铝作磨料 ,解决了抛光液的悬浮问题 ,得到了很好的抛光表面 .采用无金属离子的有机碱作络合剂及 p H调制剂 ,使用了无金属离子的氧化剂解决了铜离子沾污问题和制约硅溶胶作磨料的凝胶问题 .从而得到一种适用于甚大规模集成电路 (U L SI)制备中铜互连线技术的化学机械抛光(CMP)
A new kind of slurry used in CMP of copper films is presented for the purpose of delineating and planarizing inlaid copper interconnections for multilevel metallization in silicon integrated circuits.A rigidity appropriated,non contaminated,nanometer degraded silicon dioxide is used,instead of Al 2O 3,which is an abrasive in traditional way.A non ions oxidant and organic alkali are also adopted to solve the problem of ions pollution and to avoid to jelling.The variety of slurry compounding on polishing parameters is discussed too.
基金
天津市自然科学基金资助项目 (编号 :0 13 60 5 911)~~
