摘要
介绍了用于 1 0 Gb/s光传输系统前端模块的超细栅 Ga As FET器件的制作技术以及制作的数 /模
The technology of ultra fine gate GaAs FET device used in the front end modules of 10Gb/s optical communication systems is introduced in this paper.The design of digital and analog IC chips is also presented.
出处
《半导体情报》
2001年第6期22-24,58,共4页
Semiconductor Information
关键词
光通信
砷化镓
集成电路
GaAs FET
digital/analog IC
optical communication
