单场限环的平面高压器件
High voltage planar discrete semiconductor device with single field limiting rings
摘要
通过优化设计和充分利用硅片面积 。
By optimizing designs and take full advantage of silicon's area,the high voltage planar discrete semiconductor device with single field limiting rings is produced.
出处
《半导体情报》
2001年第6期42-44,共3页
Semiconductor Information
