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异质结应变层的临界厚度的确定 被引量：1

Critical layer thickness of heterostructure stain layer
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摘要 简要介绍了异质结的临界厚度，叙述了计算临界厚度的两种理论和其实验值。 Critical layer thickness of heterostructure is presented simply. Two theories to calculate the equilibrium critical thickness and their experimental value are given.
作者 白利伟 胡礼中
机构地区 大连理工大学物理系
出处 《半导体技术》 CAS CSCD 北大核心 2002年第2期69-71,74,共4页 Semiconductor Technology
基金 教育部优秀年轻教师资助项目
关键词 异质结 应变层 临界厚度 失配位错 半导体 heterostructure strain layer critical layer thickness misfit dislocation
分类号 TN302 [电子电信—物理电子学]
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参考文献23

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同被引文献13

  • 1白大夫,刘训春,王润梅,袁志鹏,孙海锋.Super Performance InGaP/GaAs HBT with Novel Structure[J].Journal of Semiconductors,2004,25(7):756-761. 被引量：6
  • 2Yi Changhyun.InP-based HBTs for high speed and RF applications:advanced emitter-base designs.Doctorial Dissertation of the Georgia Institute of Technology,2002
  • 3Jin Hyoun Joe,Mohamed Missous.High gain InGaP/GaAs HBTs with compositionally graded InGaAs bases grown by MBE.IEEE,2002:237
  • 4Ahmari D A,Hartmann Q J,Fresina M T,et al.High-speed InGaP/GaAs HBTs with a strained InxGa1-x As base.IEEE Electron Device Lett,1996,17(5):226
  • 5曲轶.980nm应变量子阱激光器的设计与分析.吉林大学博士学位论文,2001
  • 6Chinkyo Kim.Strain relaxation mechanism of semiconductor thin films.PhD Dissertation,University of Illinois at Urbana-Champaign,1998
  • 7Zeng W,Jiang S S,Huang X R,et al.Reduction of misfit dislocation density in strained InxGa1-xAs heterostructures via growth on patterned GaAs (001) substrate.IL Nuovo Cimento:1997,19(2～4):241
  • 8Carrie Anne Carter Coman.Compound semiconductor compliant substrates for extension of the conventional critical thickness in mismatched overlayers and strain-modulated epitaxy.PhD Dissertation,Georgia Institute of Technology,1996
  • 9Matthews J W.Epitaxial growth (Part B).New York:Academic Press,1975:559
  • 10Matthews J W.Defects associated with the accommodation of misfit between crystals.J Vac Sci Tech,1975,12:126

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半导体技术
2002年 第2期

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