畸变的掩模对光刻图形质量的影响

Effect of distortion of mask on photolithography pattern quality

基于描述激光直写邻近效应的双高斯函数之差抗蚀剂模型 ,计算分析了邻近效应带来的掩模加工的偏差 ,及其对光刻图形质量的影响。模拟结果表明 ,当掩模的特征尺寸为 1.5 μm时 ,激光直写所加工掩模的相对面积偏差达 5 % 。

Following the difference of double Gaussian function describing the proximity effects in laser direct writing,the distortion of the mask and its influence on projection lithography pattern quality are simulated.The results show that the area deviation of the mask fabricated by laser writer is about 5% and make the projection lithography quality worse.