期刊文献+

基于硅表面加工工艺的射频体声波滤波器研究 被引量:3

Study of RF-MEMS BAW Filter Using Surface Micromachining
下载PDF
导出
摘要 计算并讨论了由电极 -压电薄膜 -电极的三明治结构组成的体声波谐振器在有衬底情况下的阻抗 ,特别说明了厚的支撑膜对滤波器性能的严重影响。同时比较了在制作体声波滤波器时硅的体加工工艺和表面加工工艺的优劣 。 The analytical solutions of the wave equation for the electrode piezoelectrics electrode sandwich structure on support film in the BAW RF resonators are presented The advantages and disadvantages of fabricating BAW RF filter using surface and bulk micromachining are discussed A novel structure of front end passband bulk acoustic wave(BAW) filter using surface micromachining is given
出处 《压电与声光》 CSCD 北大核心 2002年第1期1-3,共3页 Piezoelectrics & Acoustooptics
基金 "九七三"重大基金资助项目 (G19990 3 3 10 5 ) 国家自然科学基金资助项目 (6980 60 0 7)
  • 相关文献

参考文献3

  • 1NAIK R S, LUTSKY J J, REIF R,et al. Measurements of the bulk, c-axis electromechanical coupling constant as function of A1N film quality [J]. IEEE Transactions on Ultrasonics, Ferroelectrics,and Frequency Control, 2000,47 (1): 292-296.
  • 2GREGORY T A K,NADIMI I M, KURT E P. Bulk micromachining of silicon[C]. Standford Univ. CA,USA: Center for Integrated Syst,Proceedings cf the IEEE, 1998.
  • 3HEDRICH F. Structuring of membrane sensors using sacrificial porous silicon[J]. Sensors and Actuators,2000,84:315-323.

同被引文献46

  • 1Lakin KM. Areview of the thin-film resonator technology[J]. IEEE Microwave Mag, 2003, 4(4): 333-336.
  • 2Lakin K M, Wang J S. Acoustic bulk wave composite resonators. Appl Phys Lett, 1981, 39(3): 125-128.
  • 3Krishnaswamy S V, Rosenbaum J. Horwitz S, et al. Film bulk acoustic wave resonator technology [J]. IEEE Ultrason Symp, 1990, 1(1): 529-536.
  • 4Bradley P, Ruby R, Larson J D, et al. A film bulk acoustic resonator (FBAR)duplexer for USPCS handset applications[J]. IEEE MTT-S, 2001, 1(1): 367-370.
  • 5Aigner R. High performance RF-filters suitable for above IC integration: film bulk-acoustic-resonators (FBAR) on silicon[J]. IEEE Custom Integrated Circuits Conf, 2003, 1(1): 141-146.
  • 6Aigner R. MEMS in RF filter appllications: thin -film bulk acoustic wave technology[J]. Sens Update, 2003, 12(1): 176-208.
  • 7Park J Y, Lee H C, Lee K H, et al. Micromachined FBAR RF filters for advanced handset applications [J]. IEEE Int Conf on Solid State Sens, Actuat Microsyst,2003, 12(1): 911-914.
  • 8Ruby R, Bradley P, Oshmyansky Y, et al. Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method[P].US-6714102, 2004-03-30.
  • 9Lakin K M, Belsick J R, Mcdonald J P, et al. Bulk acoustic wave resonators and filters for applications above 2 GHz[J]. IEEE MTT-S, 2002, 3(1): 1487-1490.
  • 10Jae H J, Yong H L, Jung L, et al. Vibration mode analysis of RF film bulk acoustic wave resonator using finite element method[J]. IEEE Ultrason Symp Proc, 2001, 1(1): 847-850.

引证文献3

二级引证文献15

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部