提高晶体管稳态热阻测量精度的经验被引量：1

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摘要简单论述了大功率MOS晶体管稳态热阻的测量原理,以及实现快速测量的必要途径,重点叙述了解决测量结果重复性的建议。

作者史晓峰

机构地区国防微电子元器件计量一级站

出处《电子标准化与质量》 2001年第6期40-42,共3页 Electronic Standardization & Quality

关键词晶体管热阻测量精度质量可靠性经验 MOS晶体管稳态热阻

同被引文献8

1Chung, Predicting maximum Enclosure Temperature, machine Design , P 101-107, 1987.
2KeynellM, Avionics Integrity Program, U.S. Air Force, 1990.
3Mil-HDBK-251 Reliab~ty/Design Thermal applications, Department of defense, U.S. 1978.
4Y. G. Kim, "Folded Staked Package Development, Proceedings of 52ndElectronic Components and Technology Conference, 2002, pp. 1341-1346.
5F. N. Masana, "A closed form solution of junction to substrate thermal resistance in semiconductor chips, " Ieee Transactions on Components Packaging and Manufacturing Technology, Dec 1996 , pp. 539-545.
6Yonemura N., Fukuda M, "Heat analysis on Insulated metal substrate" , leee, 1996.
7Sakamoto, " Thermal Design and Structure of Thick Film Hybrid IC base on Insulated Metal Substrate" Ninth SEMI-THERM symposium 1993.
8Jorda X, Perpifina X, Vellvehi M and Godignon P2006 Determination of the parasitic inductances in IGBT power modules Proc. 11th Electronique de Puissance du Fumr(EPE), Grenoble (France).

电子标准化与质量

2001年第6期

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