摘要
本文介绍了铜互联技术在深亚微米半导体工艺中的应用 ,重点介绍了铜金属互联技术中的关键工艺 ,包括在器件中采用铜金属互联线以降低互联延迟 ,大马士革 (Damascene)结构微细加工工艺 ,物理汽相淀积 (PVD)技术制备铜扩散阻挡层 (Barrier)和铜子晶层 (Cu seed) ,铜金属层化学电镀技术 (Electroplating) ,对铜金属互联工艺集成方面的要点也作了一些探讨。
The interconnecting technology of metal Copper used in IC with deep sub micron processing is introduced in the paper.The focus is on the key process of interconnecting technology of metal copper,including to reduce the time delay of copper interconnector,micro processing of Damascene structure,Cu diffused barrier by physical vapor deposition (PVD),Cu seed layer,electroplating of metal Cu layer.Some remarks of interconnecting technology of metal Cu used in IC are also mentioned.
出处
《微电子技术》
2001年第6期1-7,共7页
Microelectronic Technology
关键词
大马士革结构
深亚微米集成电路
铜金属互联技术
Copper(Cu)
Damascene structure
Physical vapor deposition(PVD)
Cu diffused barrier
Cu seed layer
Electroplating
