含PbS量子点串联双隧道结I—V特性仿真

I-V Properties Simulation of PbS Quantum-dot's DBTJ

对形成单电子器件的典型串联双隧道结结构模型 ,通过求解含时薛定谔方程 ,计算了PbS量子点自组装体系的隧穿电流与偏压的关系。给出了含PbS量子点串联双隧道结在室温下的I—V特性仿真数据 ,结果与实验符合得较好。

In this paper,the current voltage(I-V)properties of a standard double barrier tunneling junction,which forms single electron device,is simulated by solving the time dependent Schrodinger equation.The I-V simulating data of PbS quantum dot's DBTJ at room temperature is given.The numerically simulated results are in good agreement with the experimental results.