应用于非破坏性读出铁电存储器的MFIS FET制备及其特性

Fabrication and Properties of MFIS FET for NDRO Ferroelectric Memory Application

将 Zr O2 和 PZT的 sol- gel薄膜制备技术应用到非破坏性读出铁电存储器中 ,制作出应用 Al/ PZT/ Zr O2 / p- Si结构的 MFIS电容和单管 MFIS FET,研究了 MFIS电容的界面和存储窗口特性 ,结果表明 Zr O2 介质阻挡层和 Si衬底以及 PZT的附着良好 ,在± 5 V测试电压、1MHz测试频率下 ,存储窗口电压为 2 .6 V左右 ,与相应的铁电薄膜的正、负矫顽电压差值的比为 0 .8.对于宽长比为 5 0 0μm / 5 0μm器件 ,采用栅极与源极、漏极写入方式 ,± 10 V时在写入电压下得到理想的输入 -输出特性 ;小尺寸的 4 0μm/ 8μm器件在± 5

The sol gel technology of ZrO 2 and PZT thin film growth is applied to the fabrication of the MFIS FET for NDRO ferroelectric memory.The MFIS capacitor of Al/PZT/ZrO 2/p Si structure and MFIS FET prototype device are fabricated.The memory window properties and interface of the MFIS capacitor are investigated.It is indicated that the ZrO 2 thin layer have good adherence both to the PZT thin film and the Si substrate.The memory window is about 2 6V when the applied voltage sweeps from -5V to +5V,and the ratio of the memory window to the different value between the positive and negative coercive voltage of the ferroelectric thin film is about 0 8.The MFIS FET with 500μm/50μm size showed the perfect input output characteristics when the ±10V write voltage was applied between the gate and the source or the drain.The MFIS FET with small size (40μm/8μm) also has good input output characteristics.