低温光导型InSb红外探测器研究

Study on Low-temperature Photoconductive InSb Infrared Detector

文中讨论了决定光导型探测器性能的主要因素。在理论分析的基础上 ,对低温单元光导InSb探测器的主要工艺参数进行分析和估算。

In the paper,the main factors that determine the performance of photoconductive infrared detector are discussed.On the basis of photoconductive theory.the main processing parameters of low temperature photoconductive InSb detector are analysed and estimated.The results of our study are given.