射频阱中基态Sc^(3+)与Ti^(3+)多电荷离子的产生及存储特性

Production and Storage Property of Ground Multiply-charged Ions of Sc^(3+) and Ti^(3+) in RF Ion Trap

结合离子阱选择囚禁技术和垂直交叉的离子束碰撞冷却方法 ,在射频阱中用激光溅射纯金属靶产生并选择囚禁了难熔元素钪与钛的低能多电荷离子Scn +(n =1～ 3)和Tin +(n =1～ 4)。在本底气压为 5 6× 10 - 7Pa下 ,测得Sc3 +与Ti3 +离子的衰减速率分别为 1 98s- 1 与 0 5 8s- 1 。

By means of the selective trapping and two separated crossed ion beams at right angles, the ground low energy (electron volt) multiply charged Sc n+ (n=1～3) and Ti n+ (n=1～4) ions have been produced from refractory pure metal targets in a RF ion trap. The measured decay rates of Sc 3+ and Ti 3+ are 1.98 s -1 and 0.58 s -1 with the base pressure 5.6×10 -7 Pa, respectively.