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γ辐照掺杂SiO_2的ESR研究 被引量:1

ESR STUDIES OF Γ- IRRADIATED SiO_2 DOPED WITH IMPURITY IONS
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摘要 分别掺有磷和硼的二氧化硅经γ辐照后产生多种顺磁性中心,ESR研究指出氧空穴O^-主要稳定在杂质离子附近.O_2^-自由基稳定在Si离子上.F心的研究认为氧缺位俘获电子存在一个动态平衡过程. ESR method was used to study the properties of paramagnetic centers generated by y- irradiating silica gel containing respectively phosphorus and boron as impurity ions. Oxygen holes O- were found to be stablized close to impurity ions. In addition, O2- radical and F colour center signals were observed and investigated. A dynamic equilibrium process would exist during F centers formation.
出处 《波谱学杂志》 CAS CSCD 1989年第1期35-40,共6页 Chinese Journal of Magnetic Resonance
关键词 Γ辐照 ESR Sio2掺杂 Doping SiO2 γ-irradiation ESR O2^- radical O- hole center.
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