混合电压I/O电路的ESD保护结构研究

The investigation of ESD protection for mixed-voltage I/O

给出了混合电压 Ｉ／Ｏ电路坚固的 ＥＳＤ保护结构，它是由放大器结构的 ＮＭＯＳ晶体管组合而成。这个保护电路由硅化物和硅化物隔离两种工艺研制而成。为了确保硅化物器件指状触发的一致性，增加了栅电压调节电路，研究电路的设计规则以避免产生寄生的击穿路径。

We demonstrate that NMOS transistors stacked in a cascode configuration provide robust ESD protection for mixed voltage I/O in both silicided and silicide-blocked technologies. Circuits for gate voltage modulation were added to ensure uniform finger triggering of the fully silicided device. Layout and circuit rules were developed to avoid parasitic breakdown paths.