名义上无序的GaInP合金的发光瞬态过程研究

Luminescence Decay on the Nominally Disordered GaInP Alloy

报道了名义上无序GaxIn1 xP(x =0 .5 2 )合金的发光瞬态过程 ,对样品在 77K和 30 0K下不同激发强度的时间衰退过程和时间分辨光谱的分析表明 ,这块名义上无序的合金也存在很微弱的有序度 .在 77K的高激发强度下 ,衰退过程符合单指数衰退规律 ,在低激发强度下 ,符合双指数衰退规律 ;而在 30 0K下 ,衰退过程都符合双指数衰退规律 .在

Luminescence decay and Time-Resolved Photoluminescence(TRPL) spectroscopy were applied to study the transient luminescence process of the nominally disordered GaInP alloy in this paper. The luminescence decay of GaInP alloy is temperature and excitation-intensity dependent. At 77 K and under high excitation intensity, the luminescence decay shows single exponential decay, while under low excitation intensity of 77 K or at 300 K, the luminescence decay shows double exponential decay. The analysis indicates that this nominally disordered GaInP alloy actually exists very weak degree of order. The blue-shift of PL peak was observed in the TRPL spectra at 77 K, which derives from the transfer of the carriers from the ordered domain to the disordered region. At 300 K, due to the thermal quenching, the transfer is too weak to be observed. However, the recombination of the carriers between the ordered domain and the disordered region still devotes to the luminescence.