HFCVD法合成金刚石的初期生长过程

Initial growth process of diamond crystal synthesized by HFCVD method

用XL30FEG扫描电镜对热丝化学气相沉积 (HFCVD)法合成的金刚石颗粒的初期生长过程进行了研究。结果表明 ,金刚石在 p -Si(10 0 )基片上的初始形核密度很高 ,可达 10 10 /cm2 ;在随后的颗粒长大过程中 ,颗粒快速长大 ,颗粒密度急剧减少 ;颗粒的长大速率随其尺寸的增大而减小 。

The initial growth process of diamond grain synthesized by HFCVD method was investigated by using XL30FEG SEM. The results show that the initial diamond grain density on p-Si(100) substrate is more than 10 10 /cm 2. As deposition progress, the grains grow up rapidly and the density decreases quickly. The growth rate of diamond grain decreases as grain growing up and tend to a certain rate at last.