高功率亚纳秒GaAs光电导开关的研究

Investigation of high-power sub -nanosecond GaAs photoconductive switches

报道了具有全固态绝缘结构的横向型半绝缘GaAs光电导开关的研制和性能测试结果 .其中 8mm电极间隙的GaAs开关暗态绝缘强度达 2 8kV ,分别用ns和ps激光脉冲触发开关的结果表明 ,开关输出电磁脉冲无晃动 ,电流脉冲上升时间小于 2 0 0ps ,脉宽达亚ns,3mm电极间隙的GaAs开关的峰值电流达 5 6 0A ,电磁脉冲重复率 10 8Hz.给出不同电极间隙的GaAs开关工作于线性和lock on状态下的实验结果 ,测试了GaAs开关工作于lock on状态下的光能。

Experiments of an all solid state insulated lateral semi insulating GaAs photoconductive semiconductor switch(PCSS) triggered by nano second and pico second laser pulses are reported. Both linear and nonlinear modes of the 3 mm gap and 8 mm gap GaAs PCSS was observed when triggered by a nano second laser. The current could be as high as 560A. The same device also revealed good temporal characteristics when trigger with a pico second laser. The rising time of the PCSS response is less than 200ps, which is limited by the coaxial cable.