锰硅化物的固相反应生长研究

Phase transformation during the solid-phase growth of manganese silicides

报道了利用固相反应方法在单晶Si(10 0 )衬底上制备锰硅化物薄膜 .实验发现 ,样品在固相反应过程中经历了两种相转变 ,即反应温度为 45 0℃时形成了立方相MnSi,达到 5 5 0℃时形成了四方相MnSi1 73 .随着反应温度的提高 ,薄膜呈现取向生长 .利用四探针法对固相反应过程中化合物薄层方块电阻的原位测量表明 ,立方相开始形成的温度约为 410℃ ,由立方相向四方相转变的起始温度约为 5 30℃ .

Manganese silicide thin films have been prepared on n type Si(100) wafers by solid\|phase reaction. The phase transformation has been characterized by X ray diffraction, in situ resistivity and Fourier infrared transmittance measurements. It was shown that two manganese silicide phases have been sequentially formed by the reaction of thin layer Mn with Si substrate at different infrared radiation stages. The crystallization of the MnSi occurs at 410℃, while MnSi/MnSi 1 73 phase transformation temperature is 530℃. Fourier transform infrared spectra have shown the characteristic phonon bands of the different structural phases of manganese silicides formed at different temperatures.