东莨菪碱致记忆障碍大鼠中枢电压依赖性钾通道亚型的表达

mRNA EXPRESSIONS OF VOLTAGE-DEPENDENT POTASSIUM CHANNELS IN THE BRAIN OF SCOPOLAMINE-INDUCED MEMORY IMPAIRED RATS

目的 研究东莨菪碱致记忆障碍大鼠模型中枢电压依赖性钾通道亚型mRNA表达的差异。方法 Morris水迷宫实验检验大鼠空间学习记忆能力 ,用RT PCR方法检测大脑皮层和海马中 5种电压依赖性钾通道Kv1 4 ,Kv1 5 ,Kv2 1,Kv4 2及Kv4 3mRNA的表达。结果 注射东莨菪碱大鼠的学习记忆能力明显下降 ,大脑皮层中Kv4 2的表达比对照组降低 2 8 8% ;海马中Kv1 4的表达升高 111 7% ,Kv2 1的表达升高 64 3 % ,而Kv4 2的表达降低3 3 9%。其它电压依赖性钾通道表达的变化不大。

AIM To study mRNA expression difference of voltage dependent potassium channels in the brain of scopolamine induced memory impaired rats. METHODS Memory impairments induced in rats by scopolamine (1 mg·kg -1 ) were assessed in the Morris water maze test. After rats were injected intraperitoneally with scopolamine for 6 days, the mRNA expression level of five voltage dependent potassium channels, Kv1 4, Kv1 5, Kv2 1, Kv4 2 and Kv4 3 were detected in the rat cortex and hippocampus by RT PCR. RESULTS Scopolamine (1 mg·kg -1 ) was shown to significantly induce memory impairment in rats. The mRNA levels of Kv4 2 were decreased by 28 8% and 33 9% in the cortex and hippocampus, respectively. The mRNA levels of Kv1 4 and Kv2 1 were increased in the hippocampus by 111 7% and 64 3%, respectively. There were no differences in the brain mRNA levels of other voltage dependent potassium channels in scopolamine induced memory impaired rat. CONCLUSION The mRNA expression levels of voltage dependent potassium channels changed significantly in the brain of scopolamine induced memory impaired rats.