摘要
半个世纪以来 ,光电子成像 (主要包括微光成像和热成像 )技术取得了惊人的发展 ,显示出极为辉煌的前景 .在微光成像技术方面 ,发展了一代、二代和三代直视像增强技术 ,真空和固体微光摄像技术及光子计数成像技术 ;在热成像技术方面 ,发展了致冷型一代、二代和三代热成像技术和非致冷型列阵热成像技术 .回顾光电子成像技术自 1930年以来的进展 ,展望新世纪中微光四代像增强技术、新型微光摄像技术和先进的焦平面 (FPA)和非致冷型热成像技术的发展 .
Over half a century, photoelectronic imaging which consists mainly of low light level imaging and thermal imaging, has made marked progress, and demonstrated brilliant prospects. In the area of low light level imaging, image intensification technique of the first, second and third generation, vacuum and solid state imaging pickup, as well as photon counting imaging systems have successively made their appearance. In the area of thermal imaging, cooled matrix thermal imaging techniques of the first, second, and third generation, and thermal imaging with uncooled matrices have made their advances. The present paper reviews the photoelectronic imaging technique since the 1930's and gives its prospects concerning developments in the new century on low light level image intensification of the fourth generation, on new low light level imaging pickup techniques as well as on advanced focal plane array (FPA) and uncooled thermal imaging.
出处
《北京理工大学学报》
EI
CAS
CSCD
北大核心
2002年第1期1-12,共12页
Transactions of Beijing Institute of Technology