摘要
利用自行编制的半导体器件模拟程序 m PND1 D(采用时域有限差分方法 ,求解器件内部载流子所满足的非线性、耦合、刚性方程组 ) ,对 PIN二极管微波限幅器在高功率微波激励下的响应进行了计算 ,比较了不同条件下的计算结果 ,并对二极管微波响应截止频率作了探讨。计算结果表明 :随着激励源幅值的升高 ,器件截止频率增大 ;随着脉冲长度减小 ,器件截止频率降低 ;随着器件恒定温度值升高 。
Making use of our own program mPND1D for modeling the semiconductor devices, the response of a PIN diode limiter to the high power microwave (HPM) was calculated, results for different conditions was compared, and also the diode cutoff frequency for microwave sources was analyzed. The results show that the cutoff frequency increases with the rising of the source amplitude, and it decreases with the decreasing of pulse length and device temperature.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2002年第2期299-301,共3页
High Power Laser and Particle Beams
基金
国家 8 6 3强辐谢重点实验基金项目 ( 99-0 2 )
湖南省自然科学基金项目 ( 0 0 JJJY2 0 0 9)
