摘要
报道了激光二极管端面抽运Nd∶YVO4 半导体材料GaAs被动调Q激光器运转。测量了不同透过率输出镜条件下 ,输出调Q脉冲的宽度、能量及脉冲重复率。在抽运功率为 4W时 ,得到了脉宽为 30ns、能量为 8μJ、重复率为6 0kHz的稳定的调Q脉冲。
A passively Q switched laser diode end pumped Nd∶YVO 4 laser is demonstrated in which a GaAs film is used as the saturable absorber. The pulse width, pulse energy and pulse repetition rate of different output coupler are measured. At 4 W pumping power, stable laser pulse as short as 30 ns with 8 μJ energy and 60 kHz pulse repetition rate can be generated with this laser. Meanwhile, the Q switching dynamics is theoretically studied based on the rate equations. Some phenomena generated in the laser are analyzed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2002年第3期298-302,共5页
Acta Optica Sinica
基金
中国博士后基金
山东大学青年基金资助课题
