(HgCd)Te探测器-光吸收系数控制器组件的实验研究

Experimental Study of (HgCd)Te Detectors with Photon Absorption Coefficient Controller

(HgCd)Te探测器具有较为明显的弗兰兹 凯尔迪什效应 ,且其弗兰兹凯尔迪什效应有效强度的强弱与(HgCd)Te探测器的外加偏压有关。据此制作了 (HgCd)Te探测器的光吸收系数控制器 ,并用 (HgCd)Te探测器和光吸收系数控制器组成一个组件 ,实验证明了该组件既能提高输出信号 ,又能实现强光保护 ,这在实际应用中具有一定的价值。

HgCd)Te detectors have strong Franz Keldysh (F K) effect and the effective intensity of F K effect of the (HgCd)Te detector has close relation to bias voltage,. According to this principle, electronic circuit of controlling (HgCd)Te detector′s photon absorption coefficient has been designed and fabricated. Experimental results show that the module composed of a photon absorption coefficient controller and (HgCd)Te detectors can meet the needs of practical application in some extent.