采用碳纳米管改善GaN HEMT器件结构散热

Improved Heat Dissipation in GaN HEMT with Carbon Nanotubes

自热效应是影响GaN HEMT器件特性的一个重要因素.本文我们对比研究了不同衬底的GaN HEMT器件传统封装、倒装结构的热特性,并采用高热导率的碳纳米管改善倒装器件散热.从仿真结果看,倒装结构对器件的散热能力有一定提升,而碳纳米管又增强了的倒装结构的散热能力.采用碳纳米管的倒装结构使得以蓝宝石,硅和碳化硅为衬底的器件总热阻分别降低了77.1%、50.6%、32.9%.因此,碳纳米管能够改善倒装结构的散热,并增强器件的特性和可靠性.

Self-heating is a very severe factor for GaN HEMT performance.In this paper,we comparative study thermal characteristics of the conventional packaging and flip-chip GaN HEMT devices with various substrates and improve heat dissipation of the flip-chip devices by using carbon nanotubes with high thermal conductivity.From the results,flip-chip lower temperature of device,while the carbon nanotubes increase the heat dissipation of flip-chip.The thermal resistance of devices with sapphire,Si and SiC substrates decreased by 77.1%,50.6% and 32.9%,respectively,with carbon nanotubes.Therefore,carbon nanotubes can improve the heat dissipation of the flip-chip structure and enhance the performance and reliability of the device.