Mg掺杂浓度对射频磁控溅射制备Ga_2O_3薄膜性质的影响

Effect of Mg doping concentration on Ga_2O_3 thin films prepared by RF magnetron sputtering

本文使用射频磁控溅射法,采用双靶磁控溅射系统,通过Ga_2O_3和Mg O两个靶位交替溅射的方法实现不同浓度Mg掺杂氧化镓薄膜的制备。结果发现随着Mg掺杂浓度的增加,薄膜的厚度逐渐减小且薄膜的结晶质量有所下降,光透过率无明显变化,但带隙宽度逐渐增加,可实现Ga_2O_3薄膜带隙宽度的连续可调,可调范围从4.96eV到5.21eV;光致发光光谱实验结果表明Mg的掺杂导致PL峰值发生蓝移现象,且在473nm附近出现一个新的发光峰。

Radio frequency magnetron sputtering was used to deposit Mg doped Gallium oxide(Ga2O3) thin films with different Mg concentrations by alternate sputtering of Ga2O3 and MgO targets. The results showed that with the increase of Mg concentration,the crystallinity of the films decreased and the thickness of the films reduced; the light transmittance had no obvious change, but the band gap increased gradually, so we can change the band gap width of Ga2O3 film continuously by doping Mg into Ga2O3 film rangeing from 4.96 eV to 5.21 eV; The PL spectroscopy results show that the doping of Mg leads to a blue shift of the PL peak,and a new luminescence peak appears near the 473 nm blue light.