一种新型的高维持电压可控硅

A New Type of High Holding Voltage SCR

可控硅(SCR)作为静电放电(ESD)保护器件,因具有高的鲁棒性而被广泛应用,但其维持电压很低,容易导致闩锁问题。针对高压集成电路的ESD保护,提出了一种新颖的具有高维持电压的SCR结构(HHVSCR)。通过添加一个重掺杂的N型掺杂层(NIL),减小了SCR器件自身固有的正反馈效应,从而提高了SCR的维持电压。Sentaurus TCAD仿真结果表明,与传统的SCR相比,改进的HHVSCR无需增加额外的面积就可将维持电压从1.88V提高到11.9V,可应用于高压集成电路的ESD防护。

Silicon controlled rectifier (SCR)is widely used as an electrostatic discharge (ESD)protection device because of its high robustness.However,SCR has a very low holding voltage which can easily lead to latch-up.A novel SCR structure with high holding voltage (HHVSCR)was proposed for ESD protection of high voltage integrated circuits.By adding a heavy doped NIL layer (N-type implantation layer)to reduce the intrinsic positive feedback effect of SCR device,the holding voltage of the SCR could be improved.The simulation results of Sentaurus TCAD showed that,compared with the traditional SCR,the improved HHVSCR could increase the holding voltage from 1.88V to 11.9V without additional area,and the improved device structure could be applied to ESD protection of high voltage integrated circuits.