摘要
为研究换流阀饱和电抗器参数对晶闸管过电压影响需搭建换流阀整体仿真模型。基于饱和电抗器结构搭建了其等效模型,再结合端间脉冲电压仿真与实验波形验证等效模型的准确性;研究并给出晶闸管单级宽频等效模型与换流阀阀塔分布电容网络,通过所搭建的换流阀整体模型仿真研究了冲击电压下晶闸管承受过电压情况,给出不同工况时晶闸管电压工作曲线,验证换流阀参数设计的合理性;研究陡波冲击实验时饱和电抗器各参数变化对晶闸管承受过电压的影响,给出饱和电抗器参数设计时重要的参考依据。结果表明换流阀及饱和电抗器参数设计合理,不同冲击电压时晶闸管均工作在安全电压范围内。
In order to study the influence of saturable reactor parameters on thyristor overvoltage of converter valve, a whole simulation model of converter valve should be built.The equivalent circuit model is built based on the saturable reactor structure.The accuracy of the equivalent model is verified by the simulation of terminal impulse voltage and the test waveform.The broadband equivalent model of single-stage thyristor is studied and given.At the same time,the distribution capacitance network of the valve tower of the converter valve is studied.The overvoltage of thyristor under impulse voltage is simulated by the whole model of converter valve.The operating curve during different impulse voltage of thyristor is given.The rationality of parameter design of converter valve is verified.The influence of various parameters of saturable reactor on thyristor withstanding overvoltage is studied,and the important reference basis for the parameter design of saturable reactor is given.The results show that the parameters of converter valve and saturable reactor are designed reasonably.The thyristor operates within the safe voltage range under different impulse voltages.
作者
刘磊
张翔
孙健
方太勋
LIU Lei;ZHANG Xiang;SUN Jian;FANG Tai-xun(NR Electric Co.,Ltd.,Nanjing 211102,China)
出处
《电力电子技术》
CSCD
北大核心
2018年第12期8-10,共3页
Power Electronics
关键词
饱和电抗器
晶闸管过电压
宽频等效模型
saturable reactor
thyristor overvoltage
broadband equivalent model