摘要
In this work, we study the influence of carrier gas H2flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H2flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H2flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.
In this work, we study the influence of carrier gas H_2 flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H_2 flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H_2 flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.
作者
刘双韬
杨静
赵德刚
江德生
梁锋
陈平
朱建军
刘宗顺
刘炜
邢瑶
彭莉媛
张立群
王文杰
李沫
Shuang-Tao Liu;Jing Yang;De-Gang Zhao;De-Sheng Jiang;Feng Liang;Ping Chen;Jian-Jun Zhu;Zong-Shun Liu;Wei Liu;Yao Xing;Li-Yuan Peng;Li-Qun Zhang;Wen-Jie Wang;Mo Li
基金
Project supported by the the Science Challenge Project of China(Grant No.TZ2016003)
the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,and 61474110)
Beijing Municipal Science and Technology Project(Grant No.Z161100002116037)
