摘要
We have theoretically studied current self-oscillations in double-layer graphene n+nn+ diodes driven by dc bias with the help of a time-dependent hydrodynamic model. The current self-oscillation results from resonant tunneling in the double-layer graphene structure. A detailed investigation of the dependence of the current self-oscillations on the applied bias has been carried out. The frequencies of current self-oscillations are in the terahertz(THz) region. The double-layer graphene n+nn+ device studied here may be presented as a THz source at room temperature.
We have theoretically studied current self-oscillations in double-layer graphene n+nn+ diodes driven by dc bias with the help of a time-dependent hydrodynamic model. The current self-oscillation results from resonant tunneling in the double-layer graphene structure. A detailed investigation of the dependence of the current self-oscillations on the applied bias has been carried out. The frequencies of current self-oscillations are in the terahertz(THz) region. The double-layer graphene n+nn+ device studied here may be presented as a THz source at room temperature.
基金
Project supported by the National Natural Science Foundation of China(No.11604126)
