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Wet nitrogen oxidation technology and its anisotropy influence on VCSELs

Wet nitrogen oxidation technology and its anisotropy influence on VCSELs
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摘要 Vertical cavity surface emitting lasers(VCSELs) are widely used in optical communications and optical interconnects due to their advantages of low threshold, low power consumption and so on. Wet nitrogen oxidation technology, which utilizes H20 molecules to oxidize the Al;Ga;As, is used for electrical and optical mode confinement. In this paper, the effects of oxidation time, oxidation temperature and oxidation anisotropy on the oxidation rate are explored and demonstrated. The ratio of oxidation rate on [0-11] to [011] crystal orientation is defined as oxidation anisotropy coefficient, which decreases with the increase of oxidation temperature and oxidation time. In order to analyze the effect of the oxidation anisotropy on the VCSEL performance, an oxide-aperture of the VCSELs with two difference shapes is designed and then fabricated. The static performance of these fabricated VCSELs has been measured,whose threshold current ratio ~0.714 is a good agreement with that of the theoretical calculation value ~0.785. Our research on wet nitrogen oxidation and its anisotropy serves as an important reference in the batch fabrication of large-area VCSELs. Vertical cavity surface emitting lasers(VCSELs) are widely used in optical communications and optical interconnects due to their advantages of low threshold, low power consumption and so on. Wet nitrogen oxidation technology, which utilizes H20 molecules to oxidize the Al_(0.98)Ga_(0.02)As, is used for electrical and optical mode confinement. In this paper, the effects of oxidation time, oxidation temperature and oxidation anisotropy on the oxidation rate are explored and demonstrated. The ratio of oxidation rate on [0-11] to [011] crystal orientation is defined as oxidation anisotropy coefficient, which decreases with the increase of oxidation temperature and oxidation time. In order to analyze the effect of the oxidation anisotropy on the VCSEL performance, an oxide-aperture of the VCSELs with two difference shapes is designed and then fabricated. The static performance of these fabricated VCSELs has been measured,whose threshold current ratio ~0.714 is a good agreement with that of the theoretical calculation value ~0.785. Our research on wet nitrogen oxidation and its anisotropy serves as an important reference in the batch fabrication of large-area VCSELs.
出处 《Journal of Semiconductors》 EI CAS CSCD 2018年第12期208-211,共4页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(Nos.61335004,61675046,61505003) the Open Fund of IPOC2017B011(BUPT)
关键词 wet nitrogen oxidation vertical-cavity surface-emitting laser oxidation anisotropy wet nitrogen oxidation vertical-cavity surface-emitting laser oxidation anisotropy
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  • 1Hofmann W, Moser W, Wolfe Mutig A, Kroh M and Bimberg D 2011 Optical Fiber Communication Conference March 6, 2011 Los Angeles, USA, p. PDPC5.
  • 2Liu A J, Qu H W, Chen W, Jiang B, Zhou W J, Xing M X and Zheng W H 2011 Chin. Phys. B 20 024204.
  • 3Anan T, Suzuki N, Yashiki N, Fukatsu K, Hatakeyama H, Akagawa T, Tokutome K and Tsuji M 2008 Optical Fiber Communication~NationalFiber Optic Engineer Conference February 24-28, 2008 San Diego, USA, p. 1.
  • 4Guan B L, Ren X J, Li C, Li S, Shi G Z and Guo X 20ll Chin. Phys. B 20 094206.
  • 5Chang Y C, Wang C and Coldren L A 2007 Electron. Lett. 43 1022.
  • 6Lin C K, Tandon A, Djordjev K, Corzine S and Tan M 2007 IEEE J. Select. Topics Quantum Electron. 13 1332.
  • 7Zhang W L, Pan W, Luo B, Li X F, Zou X H and Wang M Y 2008 Chin. Phys. B 17 1821.
  • 8Schow C, Doany F and Kash J 2010 1EEE Spectrum 47 32.
  • 9Goldberg L, Mclntosh C and Cole B 2011 Opt. Express 19 4261.
  • 10Wu J and Summer H D 2009 Chin. Phys. B 18 4912.

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