摘要
The(001) oriented BiFeOthin film was deposited on the Nb: SrTiOsubstrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO/Nb: SrTiOheterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
The(001) oriented BiFeO_3 thin film was deposited on the Nb: SrTiO_3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO_3/Nb: SrTiO_3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
基金
Funded by the National Natural Science Foundation of China(Nos.61201046 and 61306057)
the Beijing Natural Science Foundation of China(Nos.4162013,2132023 and 4164082)
the Beijing Postdoctoral Research Foundation(No.2015ZZ-33)
the Scientific Research Project of Beijing Educational Committee(No.KM201610005005)
the Scientific Research Foundation for Returned Overseas Chinese Scholars,State Education Ministry
