摘要
Traditionally RF power amplifiers used Gallium Arsenide(GaAs) technology which has a well behaved and understood performance. Over the past few years Gallium Nitride(GaN) technology is replacing GaAs because GaN is more efficient and has a higher power density resulting in higher power MMICs and FETs.Subject to system link budgets, we usually want to run a given amplifier as close to saturation as possible to minimize CAPEX costs. Running an amplifier closer to saturation causes many non-linear effects that can cause link performance degradation and interfere with other users.To better understand and quantify the differences between GaN and GaAs amplifiers and the impact of this on system performance, some amplifier and system measurements will be taken. The findings will be documented in a white paper.
Traditionally RF power amplifiers used Gallium Arsenide(GaAs) technology which has a well behaved and understood performance. Over the past few years Gallium Nitride(GaN) technology is replacing GaAs because GaN is more efficient and has a higher power density resulting in higher power MMICs and FETs.Subject to system link budgets, we usually want to run a given amplifier as close to saturation as possible to minimize CAPEX costs. Running an amplifier closer to saturation causes many non-linear effects that can cause link performance degradation and interfere with other users.To better understand and quantify the differences between GaN and GaAs amplifiers and the impact of this on system performance, some amplifier and system measurements will be taken. The findings will be documented in a white paper.
