基于异靛蓝的供体-受体型共聚物忆阻器的构建及性能

Construction and Characteristics of the Donor-Acceptor Type Copolymer Memristor Based on Iso-Indigo

由于供体-受体型聚合物具有较强的诱捕和释放电荷的能力,在忆阻器的研究方面具有很大的潜力。利用异靛蓝、丙烯二氧噻吩和噻吩合成了低带隙的供体-受体半导体聚合物(IPDT)(异靛蓝/噻吩/丙烯二氧噻吩的摩尔比率为x/1/1-x),构建了有机电子器件Al/IPDT/ITO,发现器件具有较稳定的忆阻特性。x=0.5时器件的开、关电压分别为8和-7.5 V,高低电阻比达到102,室温下的忍耐力循环测量超过2 000次。x=0.25时器件的开、关电压分别减小为2.2/-1.6 V,最大电流下降了5个量级。x=0.2时器件的开、关电压分别为1.9和-1.1 V,高低电阻比提高到103,最大电流仍为纳安量级。结果表明供体单元的占比越高,器件的开关电压越低,且较低的电流更有利于降低功耗。发现器件的忆阻特性是由聚合物材料内部电子通道的形成与断裂引起的。

The donor-acceptor type polymer has a strong ability to trap and release charges,so it has great potential in the research of memristors.The donor-acceptor type semiconductor polymer(IPDT)with low band gap was synthesized by iso-indigo,thiophene and3,3-bis-decyl-3,4-dihydro-2 Hthieno[3,4-b][1,4]dioxepine(ProDOT-decyl2).The molar ratio of iso-indigo/thiophene/ProDOT-decyl2 was x/1/1-x.The Al/IPDT/ITO organic electronic device was constructed.It is found that the device has the stable memristive characteristics.When x=0.5,the on/off voltages of the device are 8 V and-7.5 V,the high/low resistance ratio reaches 102,and endurance cycles measurement is carried out over 2 000 times at room temperature.When x=0.25,the on/off voltages decrease to 2.2 and-1.6 V,and the maximum current decreases by five orders of magnitude.When x=0.2,the on/off voltages are 1.9 and-1.1 V,the high/low resistance ratio is up to 103,and the maximum current is still at the magnitude of nanoampere.The results show that the higher the ratio of donor units,the lower the on/off voltages of the device,and the lower current is more conducive to reduce power consumption.It is found that the memristive characteristics of the device is due to the formation and fracture of electronic channels inside polymer materials.