化学气相沉积法制备石墨烯过程的数值模拟研究

Numerical simulation of graphene in chemical vapor deposition process

采用流体力学软件CFD对化学气相沉积法制备石墨烯过程进行数值模拟,分别研究了低压(83Pa)和常压(101325Pa)条件下反应炉内温度、压强、速度分布及石墨烯沉积情况。研究结果表明,常压下反应炉加热区压强分布不均匀,气体流动较为紊乱,容易对反应造成影响,同时由于常压下气流的紊乱使得加热区内温度分布不均匀,不利于石墨烯的表面沉积;相反在低压工况下,加热区内压力、甲烷气体流速、温度分布均匀,从而保证了整个反应的平稳进行。

The chemical vapor deposition process of graphene was simulated by computational fluid dynamics software(CFD).Temperature field,pressure field,velocity distribution and deposition of graphene were studied under the different condition of furnace which were atmospheric pressure(101325 Pa)and low pressure(83 Pa),respectively.The results showed that the pressure distribution of synthesis furnace was not uniform under atmosphere,the gas flow was disorder,it was easy to cause the effect on the reaction.At the same time,because of the pressure of airflow disorder made the heating zone temperature distribution was not uniform,it was not conducive to the graphene surface deposition process.In contrast to low pressure condition,the temperature distribution inside the heating zone,methane gas flow rate and pressure were evenly,so as to ensure the whole reaction smoothly.